| 摘要 |
PURPOSE:To provide a method of manufacturing a semiconductor device that is capable of removing ion-implanted resists with high accuracy and ease as well. CONSTITUTION:After a resist is formed on a semiconductor wafer 1, that contains a compound which generates an acid and resin whose protection group is eliminated by the acid when an energy beam is applied, a resist is exposed and developed, thereby forming a resist pattern 2A. Ultraviolet light 5A is applied to the whole surface of the resist pattern 2A, thereby generating an acid from the compound and eliminating a protection group from the resin so that the surface of the resist pattern may be turned in a rough state. Then, ions are implanted into the semiconductor wafer 1 using the resist pattern 2A as a mask. After the surface of the semiconductor wafer 1 is cleaned with a cleaning solution after the ions are implanted, the rough surfaced resist patter can be removed easily and satisfactorily as well. |
