发明名称 |
Ohmic electrode and a light emitting device |
摘要 |
An ohmic electrode to p-type II-VI compound semiconductor and its fabricating method are disclosed. The ohmic electrode comprises: a layer made of Pd or an alloy containing Pd; and a metal layer provided thereon. The fabricating method of an ohmic electrode comprises the steps of: providing a layer made of Pd or an alloy containing Pd on a p-type II-VI compound semiconductor layer; and providing a metal layer on the layer made of Pd or an alloy containing Pd. Light emitting devices such as a semiconductor laser and a light emitting diode which use the ohmic electrode as the p-side electrode are also disclosed.
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申请公布号 |
US5373175(A) |
申请公布日期 |
1994.12.13 |
申请号 |
US19930136870 |
申请日期 |
1993.10.18 |
申请人 |
SONY CORPORATION |
发明人 |
OZAWA, MASAFUMI;ITO, SATOSHI;NARUI, FUMIYO |
分类号 |
H01L21/28;H01L21/443;H01L31/0224;H01L33/04;H01L33/28;H01L33/30;H01L33/40;H01S5/00;H01S5/042;H01S5/327;(IPC1-7):H01L33/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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