| 摘要 |
<p>PURPOSE:To facilitate the manufacture and the control of varistor property and make possible the performance elevation by using a covered-particle aggregate where the surfaces of conductive particles or semiconductor particles are covered with conductive resin. CONSTITUTION:A varistor is constituted by making the section to form a bulk an aggregate of particles consisting of conductors or semiconductors, and making the section equivalent to the segregation layer having the Schottky barrier of a grain boundary out of conductive resin. That is, a varistor element is made by putting pure metal particles 11 covering a conductive film 5 into a glass tube 16 made of quartz, and connecting a metallic lead wire 17, and sealed with insulating paste 18. Hereby, the material equivalent to the bulk, the grain size equivalent to crystal gains, the material and the thickness of the cover layer equivalent to the grain boundary segregation layer can be selected or controlled easily; as a result, the varistor property can be controlled easily. Moreover, since the bulk resistance can be made extremely small by using metallic particles for the particles, high-performance varistor property becomes possible.</p> |
