FABRICATION OF THIN FILM TRANSISTOR FOR LIQUID CRYSTAL DISPLAY

摘要

PURPOSE:To enhance the transistor characteristics by covering the source electrode with the extension of electrodeposition resist for covering the drain bus line and the drain electrode when a low resistance drain bus line is formed by electrodeposition and to allow selective growth of a semiconductor layer containing impurities on the electrodes. CONSTITUTION:A resist 8 is deposited on the drain electrode 4 by electrodeposition and extended to cover the source electrode 6. Consequently, when a metal film 3 is removed by etching using the resist 8 as a mask, the source electrode 6 and the drain electrode 4 have similar layer structure. A TFT is thereby formed symmetrically by electrodeposition resist formation method and the transistor characteristics are enhanced along with the throughput. Furthermore, the process for forming the TFT is simplified because the semiconductor layer containing impurities for forming a contact layer can be grown selectively on the drain electrode 4 and the source electrode 6.