发明名称 Metal configurable hybrid memory
摘要 Embodiments of the invention relate to a metal configurable hybrid memory for use in integrated circuit designs for implementation in structured ASIC or similar platforms utilizing a base cell or standard cell. In accordance with certain aspects, a hybrid memory according to embodiments of the invention utilizes a fixed custom memory core and a customizable peripheral set of base cells. In accordance with these and further aspects, the hybrid memory can be specified using a macro, in which certain memory features (e.g. ECC, etc.) are implemented using the customizable peripheral set of base cells, and which may be selected or omitted from the design by the user. This enables the overall logic use for the memory to be optimized for a user's particular design. Unused logic in the customizable peripheral set of base cells can thus be freed for top-level logic use, thereby optimizing the design according to a user's functional and dimensional requirements and minimizing unnecessary waste of silicon area and power.
申请公布号 US9590634(B1) 申请公布日期 2017.03.07
申请号 US201615181007 申请日期 2016.06.13
申请人 BAYSAND INC. 发明人 Park Jonathan C.;Lai Yau Kok;Ong Teck Siong;Liew Yin Hao
分类号 H03K19/177;H01L27/118;H03K19/00;H03K19/173;G11C7/10 主分类号 H03K19/177
代理机构 Foley & Lardner LLP 代理人 Foley & Lardner LLP ;Danielson Mark J.
主权项 1. An integrated circuit, comprising: a memory having a peripheral logic block and a customized core memory block, wherein the peripheral logic block is configurable using programmable metal layers and thereby changes one or more of a feature and a dimension of the memory while the customized core memory block remains the same, wherein unused portions of the peripheral logic block are used for building logic blocks external to the memory.
地址 Morgan Hill CA US