发明名称 |
MANUFACTURE OF POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR |
摘要 |
<p>PROBLEM TO BE SOLVED: To allow driving a polycrystalline silicon thin film transistor from a low voltage, to greatly shortern the production process time of the transistor and moreover, to make it possible to accomplish the whole production process of the transistor at a low temperature of 600 deg.C or lower. SOLUTION: An amorphous silicon thin film formed on an insulating substrate 61 is subjected to heat treatment in an oxygen atmosphere of normal pressures or higher to a high pressure of 100atm or lower and at a temperature of 600 deg.C or lower to form simultaneously a polycrystalline silicon film 62 and an oxide film 63 and after a gate electrode 64 is formed on the above oxide film 63, a gate 64, a source 65 and a drain 65 are formed by an implantation of dopant impurities and a dopant activation treatment and moreover, an interlayer oxide film 66 and a metal electrode 17 are formed.</p> |
申请公布号 |
JPH09181324(A) |
申请公布日期 |
1997.07.11 |
申请号 |
JP19960190510 |
申请日期 |
1996.07.19 |
申请人 |
KANKOKU DENSHI TSUSHIN KENKYUSHO |
发明人 |
YOONHO SON;JIYONDEE KIMU;KIYONIKU CHIYOO |
分类号 |
G02F1/136;G02F1/1368;H01L21/02;H01L21/336;H01L27/12;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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