| 摘要 |
PROBLEM TO BE SOLVED: To form a step, which is used as a mark for alignment use in a lithography process. SOLUTION: A semiconductor device is one formed into a structure, wherein an element formation region surrounded with an element isolation region 22 is formed on the surface of a semiconductor substrate 21 and at the same time, a gate oxide film 23 is formed on the surface of the substrate 21, a gate electrode 25 is formed on the film 23, a silicon nitride film 27 is formed on the region 22, which is a matching mark region, and moreover, an insulating film 28 is deposited on the film 27. A gate electrode lead-out part 251 of the element formation region is formed in this film 28, contact holes 291 to 293 are formed in the film 28, in such a way as to correspond to diffused layers 241 and 242 and at the same time, contact holes 301, 302,... are formed in the part of the film 27. A W-film is deposited to embed the W-film in the holes 291 to 293, and the holes 291 and 293 are formed into contact metal holes 321 to 323, but as the W-film is not grown on the film 27, the holes 301, 302,... are left as they are and a step suitable for detecting a mark is left. |
