发明名称 |
ELECTRON BEAM POSITIVE RESIST AND PRODUCTION OF PHOTOMASK USING THAT |
摘要 |
PROBLEM TO BE SOLVED: To solve a problem of the trail of a chemically amplification positive resist pattern on a chromium oxide and to produce a high resolution photomask with a high throughput. SOLUTION: The resist compsn. described below is applied on a photomask substrate, irradiated with electron beams and baked. Then the substrate is developed with an alkali aq. soln. to obtain a pattern. The resist compsn. contains (a) an alkali soluble resin, (b) a compd. which produces an acid by irradiation of actinic rays, (c) a compd. derived from a polyhydroxy compd. having three or more benzene rings, three or more hydroxyl groups and two or less hydroxyl groups bonded to one benzene ring, in which hydrogen atoms in the hydroxyl groups are substituted with acid decomposable groups by 0.5 to 0.9 mol per hydrogen atom. |
申请公布号 |
JPH11249309(A) |
申请公布日期 |
1999.09.17 |
申请号 |
JP19980051789 |
申请日期 |
1998.03.04 |
申请人 |
HITACHI LTD;HITACHI CHEM CO LTD |
发明人 |
SAKAMIZU TOSHIO;ARAI TADASHI;SOGA TAKASHI;KATO KOJI;KASUYA KEI |
分类号 |
H01L21/027;C09D5/00;G03F7/004;G03F7/039;(IPC1-7):G03F7/039 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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