发明名称 ELECTRON BEAM POSITIVE RESIST AND PRODUCTION OF PHOTOMASK USING THAT
摘要 PROBLEM TO BE SOLVED: To solve a problem of the trail of a chemically amplification positive resist pattern on a chromium oxide and to produce a high resolution photomask with a high throughput. SOLUTION: The resist compsn. described below is applied on a photomask substrate, irradiated with electron beams and baked. Then the substrate is developed with an alkali aq. soln. to obtain a pattern. The resist compsn. contains (a) an alkali soluble resin, (b) a compd. which produces an acid by irradiation of actinic rays, (c) a compd. derived from a polyhydroxy compd. having three or more benzene rings, three or more hydroxyl groups and two or less hydroxyl groups bonded to one benzene ring, in which hydrogen atoms in the hydroxyl groups are substituted with acid decomposable groups by 0.5 to 0.9 mol per hydrogen atom.
申请公布号 JPH11249309(A) 申请公布日期 1999.09.17
申请号 JP19980051789 申请日期 1998.03.04
申请人 HITACHI LTD;HITACHI CHEM CO LTD 发明人 SAKAMIZU TOSHIO;ARAI TADASHI;SOGA TAKASHI;KATO KOJI;KASUYA KEI
分类号 H01L21/027;C09D5/00;G03F7/004;G03F7/039;(IPC1-7):G03F7/039 主分类号 H01L21/027
代理机构 代理人
主权项
地址