发明名称 POWER-MODULATING SUBSTRATE, MANUFACTURE THEREOF AND SEMICONDUCTOR DEVICE USING THE SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To efficiently dissipate heat from a semiconductor element by making short the transfer path from the semiconductor element to a water-cooling heat sink, without damaging the ceramic substrate. SOLUTION: A power-modulating substrate is provided with a ceramic substrate 11, where a plurality of insulating holes 11a are formed, a metal member 11 having a thickness the same as or slightly smaller than that of the ceramic substrate, which is inserted in the insertion hole, first through-holes 13a which are adhered to the surface of the ceramic substrate and the metal member via solder material 16 and communicated to the through-holes. Also, a first metal thin plate 13, where a circuit pattern 17 is formed on the part facing to the ceramic substrate and the second through holes 14a which are adhered to the backside and communicated to the through-holes and the first through- holes, are provided on this semiconductor substrate, a semiconductor element is mounted on the circuit pattern, and a power-modulating substrate 21 is connected directly to a water-cooling heat sink with a male screw.
申请公布号 JP2000183260(A) 申请公布日期 2000.06.30
申请号 JP19980352796 申请日期 1998.12.11
申请人 MITSUBISHI MATERIALS CORP 发明人 KUBO KAZUAKI;NAGASE TOSHIYUKI;NAGATOMO YOSHIYUKI;SHIMAMURA SHOICHI
分类号 H01L23/473;H01L25/07;H01L25/18;(IPC1-7):H01L23/473 主分类号 H01L23/473
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