| 摘要 |
PROBLEM TO BE SOLVED: To provide a compact, safe semiconductor device with a high breakdown voltage. SOLUTION: A semiconductor device 1 is provided with an envelope 2 that is in a bookcase type with a side surface opening 12 on one side surface of a flat box and has a bottom opening 10 on the other side surface that does not face the one side surface and a heat radiation surface 13 that is exposed from the bottom surface opening 12. Also, the semiconductor device 1 is provided with a metal base 5 for sealing the bottom surface opening 12, an insulation substrate 6 that is fixed on the reverse side of the heat radiation surface 13, a power semiconductor element 7 that is fixed on the insulation substrate 6, circuit wiring 8 that is fixed on the insulation substrate 6, an external terminal 4 that is led from at least one side surface of the envelope 2 to the outside of the envelope 2, a lid body 3 for closing the side surface opening 10, and an insulation resin 9 that is filled into the envelope 2 for sealing the metal base 5, the insulation substrate 6, the power semiconductor element 7, and the circuit wiring 8. |
