| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to apply an electric field in the direction of polarization by, if the conductive oxide of a lower electrode layer is rhombic, dimetric, or equant, controlling the orientation so that the axes having the largest length in the reference grid vector are not perpendicular to its surface and, in the case of equant, forming electrodes after formation of epitaxially grown ferroelectric oxide. SOLUTION: An insulating film 4 is formed by thermal oxidation on a p-type Si substrate 1 between a source 2' and a drain 2. Further, a gate electrode 5 of a polycrystalline silicon film is formed on the insulating film 4 by CVD in advance. The gate electrode 5 is then formed by a photolithography process and dry etching. Subsequently, in order to form the source 2' and the drain 2 ions are implanted in the substrate 1, which is then subjected to heat treatment in nitrogen. Further, a Pt layer 6 and an a-YBCO 7 are formed on the substrate by vacuum evaporation and an a-SBT 8 is formed on the layer 6 by sputtering and laser ablation. A Pt layer 9 is formed thereon. Then the substrate is subjected to reactive ion etching to form an element and further an Al layer 3 is formed.
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