| 摘要 |
PROBLEM TO BE SOLVED: To measure and display etching speed and uniformity of a film to be etched. SOLUTION: A dry etching characteristic evaluating apparatus 11 detects etching end time, based on the light emission strength of plasma light emission wavelength detected by a plasma light emission detecting part 5, and calculates the etching speed and uniformity by an arithmetic part 14 from the etching end time and the film thickness of a film to be etched. The calculated data are displayed on a display part 16 and stored in a storage part 15, and the transition data (trend graph) of the etching speed of each wafer is displayed at the display part 16, as necessary. Also, when data exceeding an abnormal value or management value inputted to an abnormal value setting part 17 are calculated, the etching process is stopped, and the mass generation of manufacture abnormality is prevented.
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