| 摘要 |
PROBLEM TO BE SOLVED: To reduce the ON voltage and to increase the breakdown voltage of a semiconductor device by reducing a junction leakage current. SOLUTION: An n-cathode region 12, a p-anode region 14, and a p+-anode region 16 are successively formed on an n+-cathode region 10. The p+-anode region 16 is formed of Ge or the like, and the p-anode region 14 and the cathode region are formed of Si or the like. A hetero junction is formed at the interface between the p+-anode region 16 and the p-anode region 14, and a pn junction is formed at the interface between the p-anode region 14 and the n-cathode region 12. By separating the hetero junction from the pn junction, influence that the level density variance of the hetero junction interface gives to characteristics is reduced. Also, by forming the pn junction in Si with a large band gap, a high breakdown voltage can be obtained.
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