| 摘要 |
PROBLEM TO BE SOLVED: To resist the high operating voltage whereto a device is subjected, by providing a voltage divider wherein an edge termination includes a plurality of MOS transistors connected in series with each other, and by providing connectively the edge termination between the terminals of a power constituting element whose drivings are impossible. SOLUTION: A device 1 comprises a MOSFET power transistor 21 connected with an edge termination 100. The power transistor 21 is connected in parallel with the series circuit comprising a diode 41 plus the series circuit comprising PMOS parasitic transistors 31, 32, 33, 34. To allow the current flowing from a source terminal S4 of the fourth PMOS parasitic transistor 34 to a source S of the MOSFET power transistor 21, these PMOS parasitic transistors 31-34 are switched on respectively when their respective sources overcome the respective threshold voltages of the PMOS parasitic transistors 31-34. Therefore, there is obtained a limit to the high operating voltage whereto the device 1 is subjected.
|
