| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element of a double- heterojunction structure, having a high light-emitting efficiency and low operating voltage. SOLUTION: The semiconductor light-emitting element of a double- heterojunction structure comprises at least a sandwich structure of an n-type clad layer 4, an active layer 5 and a p-type clad layer 6 in such a manner that the band gap energy of the active layer is formed of a material, having a smaller band gap energy than those of both the clad layers. In this case, a material of both the clad layers is selected, so that the band gas energy of the n-type clad layer is smaller than that of the p-type clad layer. |
