| 摘要 |
PROBLEM TO BE SOLVED: To provide a method, capable of inexpensively correcting a proximity effect without the use of a mask. SOLUTION: A pattern-forming region (die) 61 on a wafer 23 and a peripheral part 62 thereof are divided into pixels 23b of a dimension, sufficiently smaller than a spread dimension 63 of a backscattering electrons of an electron beam. For each of pixels 23b, the area of a non-exposure part 67 is calculated and a minimum area is found. Next, a differential area is found by subtracting the minimum area from the area of the non-exposure part 67 is each of pixels 23b. The differential area is divided into (n) gradation, and raster scanning is applied to all the pixels 23b with a spot beam which is almost blurred into the level of the spread dimension 63. The time for a beam to pass each of pixels 23b is divided into (n), and correction exposure is performed by having the pixel 23b irradiated with the beam, while canceling blanking 11 for the time interval corresponding to a gradation (i), which is the result of gradation division of each of pixels 23b, in the time divided into (n).
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