SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a technique capable of improving heat resistance of a dual damascene wiring and resistance to electromigration. SOLUTION: An interlayer insulating film 23 surrounding contact holes 26 for connecting a wiring 21 of a second wiring layer with a wiring 28 of a third wiring layer is constituted using the insulating material having relatively small Young's modulus compared with Young's modulus of the insulating material constituting the insulating film 25 surrounding the wiring groove 27.