发明名称 |
Method for manufacturing a microintegrated structure with buried connections, in particular an integrated microactuator for a hard-disk drive unit |
摘要 |
The method is intended for manufacturing a microintegrated structure, typically a microactuator for a hard-disk drive unit and includes the steps of: forming interconnection regions in a substrate of semiconductor material; forming a monocrystalline epitaxial region; forming lower sinker regions in the monocrystalline epitaxial region and in direct contact with the interconnection regions; forming insulating material regions on a structure portion of the monocrystalline epitaxial region; growing a pseudo-epitaxial region formed by a polycrystalline portion above the structure portion of the monocrystalline epitaxial region and elsewhere a monocrystalline portion; and forming upper sinker regions in the polycrystalline portion of the pseudo-epitaxial region and in direct contact with the lower sinker regions. In this way no PN junctions are present inside the polycrystalline portion of the pseudo-epitaxial region and the structure has a high breakdown voltage.
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申请公布号 |
US2002109419(A1) |
申请公布日期 |
2002.08.15 |
申请号 |
US20020124781 |
申请日期 |
2002.04.16 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
VIGNA BENEDETTO;FERRARI PAOLO |
分类号 |
B81C1/00;B81B3/00;G11B5/55;G11B5/596;G11B21/10;G11B21/21;H02N1/00;(IPC1-7):H02K41/00 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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