| 摘要 |
A method for forming an electrode of a capacitor in a dynamic random access memory comprises providing a semiconductor structure having a dielectric layer thereon. At least a first conductive node is formed on and in the dielectric layer, which is primarily comprised silicon. A second conductive layer is formed at a sidewall of the first conductive node, and multitudes of hemispherical silicon grains are formed on the second conductive layer. The hemispherical silicon grains grown on the second conductive layer can have a well-controlled thickness.
|
