LATERAL MOS FIELD EFFECT TRANSISTOR HAVING DRAIN DOPED TO LOW CONCENTRATION, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To decrease concentration to the gate of an isoelectric wire, and to increase the breakdown voltage in a DMOS transistor. SOLUTION: The lateral double diffusion MOS transistor is to have a diode structure. The diode structure has an oxidation layer that has a first conductivity-type layer and an epitaxial layer formed on an embedded layer, exposes first and second regions of the epitaxial layer, and is formed on the surface of the epitaxial layer, a second conductivity-type drift region that is formed on the first region adjacent to the oxidation layer, a second conductivity- type cathode region that is adjacent to the drift region, and a first conductivity- type cathode region that is formed in the second region adjacent to the oxidation layer.