| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering target material of a high melting point element, which is made from any element of Re, Hf, Sc and Ge, and has a high density, a high purity and a fine crystal structure, and to provide a manufacturing method therefor. SOLUTION: The method for manufacturing the sputtering target material of the high melting point element with an adequate yield comprises sintering the raw powder of any high melting point element of Re, Hf, Sc and Ge with a powder metallurgy process by using discharge plasma to densify the powder, at a sintering retention temperature of 800-1,800°C and in a sintering retention period of 20-60 minutes. Thus-manufactured sputtering target material has the structure consisting of fine crystal grains with a diameter of 10 to 300μm, a purity of 99.5 wt.% or higher, and a relative density ratio of 99.0% or higher with respect to a theoretical density. COPYRIGHT: (C)2005,JPO&NCIPI
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