| 摘要 |
PROBLEM TO BE SOLVED: To provide a HSG formation method for suppressing a film peeling and reducing a leakage current generation. SOLUTION: The method comprises depositing a doped polysilicon film 2 on the surface of a wafer 1, removing the poly silicon film 2 deposited on the backside of the wafer 1, and washing the surface of the wafer 1, wherein a natural oxide film 3 and scattered organic materials 4 are deposited on the doped polysilicon film 2. Next, both surfaces of wafer 1 are irradiated by excimer UV light. Then the natural oxide film 3 is removed by washing with IPA, and the HSG 5 is deposited using a CVD method. As a result, the decrease in yield can be prevented, because malformation of HSG 5 due to the organic materials 4 is decreased. COPYRIGHT: (C)2005,JPO&NCIPI
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