METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which suppresses the growth of pores in a crystalline silicon film formed by crystallizing with an element for accelerating the crystallization and then gettering to decrease the concentration of the element in the crystalline silicon film. SOLUTION: For removing a silicon oxide film formed on a silicon film, an etchant is used which is a liquid containing fluoride and a substance revealing a surface activity. COPYRIGHT: (C)2005,JPO&NCIPI