发明名称 METHOD OF MANUFACTURING ORGANIC SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide the method of an organic semiconductor element which prevents the TFT characteristics from deteriorating, even if the channel length or width of the element is short, whereas an element having a short channel length or width is indispensable for miniaturizing a device using an organic TFT in its manufacture. SOLUTION: The manufacturing method bakes an element after vacuum evaporation of an organic semiconductor film. Concretely, it forms the organic semiconductor film and heats this film at the atmospheric pressure or a low pressure. The baking process may be conducted in an inert gas atmosphere. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005210087(A) 申请公布日期 2005.08.04
申请号 JP20040359575 申请日期 2004.12.13
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 HIRAKATA YOSHIHARU;ISHITANI TETSUJI;FUKAI SHUJI;IMABAYASHI RYOTA
分类号 H01L51/05;H01L21/336;H01L29/786;H01L51/00;H01L51/40;(IPC1-7):H01L29/786 主分类号 H01L51/05
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