SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a high dielectric constant oxide insulating film which functions as a gate insulating film and has a reduced silicon oxide converted film thickness, a small hysteresis, and a small shift in a flat band voltage (ΔVfb). SOLUTION: A semiconductor device comprises: a silicon substrate; a silicon oxide layer formed on the surface of the silicon substrate; a first oxide layer which is composed of a high dielectric constant film having a dielectric constant higher than that of a silicon oxide and is formed above the silicon oxide layer; a first nitride layer which is formed above the first oxide layer and made of nitride having oxygen intercepting capability; and a gate electrode formed above the first nitride layer. COPYRIGHT: (C)2005,JPO&NCIPI