发明名称 MASK MANUFACTURING SYSTEM AND CORRECTING METHOD OF MASK PATTERN
摘要 <P>PROBLEM TO BE SOLVED: To provide a mask manufacturing system capable of suppressing detection of pseudo errors in the inspection step of mask patterns, where the error is negligible, when manufacturing a semiconductor device, and capable of reducing the time for developing masks. <P>SOLUTION: The system is equipped with a unit shape library 401 for storing a plurality of unit shape patterns constituting a mask pattern to be used for manufacturing a semiconductor device; a critical dimension determining unit 402 for determining the respective critical dimensions of the plurality of unit shape patterns based on manufacturing conditions of a semiconductor device; an inspection unit 322 for inspecting the manufacturability of the mask pattern, based on the critical dimensions and detecting an error violating the manufacturability from the mask pattern; a cause extracting unit 405 for extracting the causes of errors from the manufacturing conditions and design conditions of the mask pattern; a design changing unit 404 for changing the design of the mask pattern so as to satisfy the manufacturability, based on the causes; and a mask manufacturing apparatus 340 for manufacturing the mask having the mask pattern subjected to design changes. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006227407(A) 申请公布日期 2006.08.31
申请号 JP20050042603 申请日期 2005.02.18
申请人 TOSHIBA MICROELECTRONICS CORP;TOSHIBA CORP 发明人 KOBAYASHI SACHIKO;ICHIKAWA HIROTAKA;URAGAMI TAKANORI;HASHIMOTO RYUTARO;IKEUCHI ATSUHIKO
分类号 G03F1/36;G03F1/68;G03F1/84;H01L21/027 主分类号 G03F1/36
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