| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a heat treatment method and a heat treatment apparatus, whereby the heat treatments of a wafer can be performed in the nearly equal heat treatment conditions to each other, without depending on the area and disposal of the pattern of a circuit formed on the wafer and depending on the materials of the films comprising the circuit, etc. <P>SOLUTION: With respect to the heat treatment method, a wafer 10 is introduced supportively in an under low-temperature region (position B in the vertical direction) of a temperature space 8, which is present in a radiation equilibrium state formed, by a heating means 4 in a chamber 2 to increase gradually its substrate temperature to 750-800°C. Then, the wafer 10 is introduced supportively into a high-temperature region (position C in the vertical direction) of the temperature space 8 to increase its substrate temperature to its heat treatment temperature, and as to perform its heat treatment during a predetermined time. Consequently, uniform heat treatment can be performed, independently of the state of the wafer 10 (the ratio of the substrate covering areas of its silicon nitride film to its polysilicon film). <P>COPYRIGHT: (C)2006,JPO&NCIPI |
