发明名称 Semiconductor memory device having self refresh mode and related method of operation
摘要 A semiconductor memory device supporting a self refresh operation is disclosed and comprises an address buffer unit and an operation control unit. The address buffer unit may be enabled during the self refresh operation by a first external control signal to generate an internal address signal. The operation control unit controls the start of the self refresh operation in response to the internal address signal.
申请公布号 US7190628(B2) 申请公布日期 2007.03.13
申请号 US20060328237 申请日期 2006.01.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI JUNG-YONG;KANG YOUNG-GU;JANG KI-HO
分类号 G11C7/00 主分类号 G11C7/00
代理机构 代理人
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