| 摘要 |
A method for manufacturing a semiconductor device is provided to reduce a breakdown voltage between a storage node electrode and a plate node electrode by forming directly the storage node electrode at a capacitor without the use of a storage node contact plug. An insulating pattern having an opening portion is formed on a semiconductor substrate(31). A storage node electrode(36) is formed along an inner surface of the opening portion of the insulating pattern. The insulating layer is partially etched to expose selectively an inner wall and an outer wall of a top portion of the storage node electrode to the outside. A dielectric film(38) and a plate node electrode(39) are sequentially formed on the storage node electrode. The storage node electrode is made of a polysilicon layer.
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