METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING NITRIDE HARDMASK

摘要

A method for manufacturing a semiconductor device is provided to increase the selectivity between a photoresist layer and a nitride hard mask by reducing mechanical etch characteristics of plasma and improving simultaneously chemical etch characteristics of plasma using intensified pressure and fluorocarbon based gas flow rate and reduced bias power. A nitride hard mask is formed on a tungsten layer. A photoresist pattern is formed on the nitride hard mask. The nitride hard mask is selectively etched by using the photoresist pattern as an etch mask. The tungsten layer is etched by using the nitride hard mask as an etch mask. The nitride hard mask is etched by using a main etching process and an over etching process(102,103).