发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of introducing a predetermined gas from e.g. a top plate side without generating abnormal plasma discharge. <P>SOLUTION: A plasma processing apparatus has: a processing vessel 34 that can be evacuated inside with a ceiling part open; a mounting platform 36 provided in the processing vessel to mount a workpiece W; a top plate 50 comprising a dielectric that is airtightly fitted to the opening of the ceiling part to transmit electromagnetic waves; an electromagnetic wave introducing means 54 introducing the electromagnetic waves for generating plasma into the processing vessel through the top plate; and a gas introducing means 52 introducing the predetermined gas into the processing vessel. In the plasma processing apparatus, the gas introducing means comprises: a gas injection hole 108 provided in the top plate to face into the processing vessel; a breathable porous dielectric 120 for hole that is provided in the gas injection hole; and a gas supply system 110 supplying the predetermined gas into the gas injection hole. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007221116(A) |
申请公布日期 |
2007.08.30 |
申请号 |
JP20070010400 |
申请日期 |
2007.01.19 |
申请人 |
TOKYO ELECTRON LTD |
发明人 |
TIAN CAI ZHONG;NOZAWA TOSHIHISA;ISHIBASHI KIYOTAKA |
分类号 |
H01L21/3065;C23C16/455;C23C16/50;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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