| 发明名称 |
Process for producing semiconductor integrated circuit device |
| 摘要 |
When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7 A of a polymetal structure in which a WN<SUB>x </SUB>film and a W film are stacked on a polysilicon film, a wafer 1 is heated and cooled under conditions for reducing a W oxide 27 on the sidewall of each gate electrode 7 A. As a result, the amount of the W oxide 27 to be deposited on the surface of the wafer 1 is reduced.
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| 申请公布号 |
US7300833(B2) |
申请公布日期 |
2007.11.27 |
| 申请号 |
US20060553690 |
申请日期 |
2006.10.27 |
| 申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
YAMAMOTO NAOKI;UCHIYAMA HIROYUKI;SUZUKI NORIO;NISHITANI EISUKE;KIMURA SHIN'ICHIRO;HOZAWA KAZUYUKI |
| 分类号 |
H01L21/336;H01L21/28;H01L21/768;H01L21/8236;H01L21/8242;H01L27/108;H01L29/49;H01L29/51 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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