CMOS IMAGE SENSOR INCLUDING A FLOATING DIFFUSION REGION INCLUDING A PLURALITY OF IMPURITY DOPED REGIONS

摘要

A CMOS(complementary metal oxide semiconductor) image sensor including a floating diffusion region having a plurality of impurity doping regions is provided to reduce dark current by varying the doping profile of a floating diffusion region. A photoelectric generation part(210) is formed in a substrate. A floating diffusion region includes a plurality of isolation regions(310) in the substrate and a first impurity doping region formed among the plurality of isolation regions wherein the first impurity doping region is separated from the lateral surface of the isolation region by a predetermined interval. The electrons generated from the photoelectric generation part are transferred to the floating diffusion region by a transfer part(220). An upper impurity doping region can be formed between the surface of the substrate and the first impurity doping region.