Method and structure for forming FinFET CMOS with dual doped STI regions

摘要

A method of making a semiconductor device includes forming a first fin of a first transistor in a substrate; forming a second fin of a second transistor in the substrate; disposing a first doped oxide layer including a first dopant onto the first fin and the second fin, the first dopant being an n-type dopant or a p-type dopant; disposing a mask over the first fin and removing the first doped oxide layer from the second fin; removing the mask and disposing a second doped oxide layer onto the first doped oxide layer over the first doped oxide layer covering the first fin and directly onto the second fin, the second doped oxide layer including an n-type dopant or a p-type dopant that is different than the first dopant; and annealing to drive in the first dopant into a portion of the first fin and the second dopant into a portion of the second fin.

主权项

1. A semiconductor device, comprising:
a first transistor comprising a first fin patterned in a substrate, the first fin comprising a first doped region comprising a first dopant, the first dopant being an n-type dopant or a p-type dopant; a first doped oxide spacer disposed along a portion of a sidewall of the first fin adjacent to the first doped region and comprising the first dopant; a second doped oxide spacer disposed over the first doped oxide spacer and comprising a second dopant, the second dopant being different than the first dopant; a second transistor comprising a second fin patterned in the substrate, the second fin comprising a second doped region comprising the second dopant; and a third doped oxide spacer disposed along a portion of a sidewall of the second fin adjacent to the second doped region of the second fin and comprising the second dopant.