| 摘要 |
PROBLEM TO BE SOLVED: To provide an integrated circuit comprising a plurality of transistors, in which a high or a low threshold voltage exists in the same transistor substrate. SOLUTION: An integrated circuit includes a transistor of a first type with a first gate electrode and a transistor 183 of a second type with a second gate electrode 181. The first gate electrode is formed in a first gate groove that is defined in a semiconductor substrate, and the second gate electrode is formed inside a second gate groove 180 defined in the semiconductor substrate. The first gate electrode completely fills a space between two adjacent first isolation trenches, and the second gate electrode partially fills a space between two adjacent second isolation trenches, and substrate portions are arranged between the second gate electrode and the adjacent second isolation trenches, respectively. COPYRIGHT: (C)2008,JPO&INPIT
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