ENHANCED LATERAL CURRENT SPREADING LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF

摘要

The emitting device and manufacturing method thereof are provided to improve the current spreading by using the current spreading layer and the insulator. The first semiconductor layer(110), the second semiconductor layer(220) having the same polarity as the first semiconductor layer, and the current spreading layer are laminated on the substrate. The substrate is mesa-etched based on the current spreading layer, and then the first electrode is laminated on the bottom surface by mesa-etching the semiconductor layer. The active layer(120) is laminated on the top of the second semiconductor layer. The third semiconductor layer(130) is laminated on the top of the active layer. The insulating layer is laminated on the first semiconductor layer, the second semiconductor layer, the third semiconductor layer having the different polarity from the first. The transparent electrode is laminated on the third semiconductor layer. The second electrode is laminated on the top portion including the insulator among the transparent electrodes.