| 摘要 |
A chemical and mechanical polishing method and an apparatus for a metal layer using the supercritical fluid are provided to prevent deformity including the scratch, the seam, and the dishing by using the slurry in which the oxidizer is not included. A chemical mechanical polishing method of the metal layer during the process of manufacturing the semiconductor is performed through the process of two steps. The metal layer of the wafer in which the metal layer is formed and the supercritical fluid in which the oxidizer is mixed is reacted at the first step. The wafer in which the reaction is completed is flattened by the abrasive wheel machinery using the slurry in which oxidizer is not included at the second step. The supercritical fluid of the first step includes one among the additive surfactant, the dispersing stabilizer, the dissolution agent, the grinding inhibitor, the grinding accelerant, and the pro-oxidant.
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