| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of preventing diffusion of metal into a semiconductor substrate with a simple manufacturing method while minimizing increase of the number of processes. SOLUTION: In an outer peripheral part of the semiconductor substrate 1, a first material film 2 and a second material film 3 having a metal diffusion preventing function, and a third material film 4 sufficiently slow in an etching rate to a first chemical relative to the first material film 2 and sufficiently slow in an etching rate to a second chemical relative to the second material film 3 are formed in that order. Thereafter, a groove structure is formed, thereafter an embedding insulation film 6 is formed, and a flattening process is executed. Thereafter, the second material film 3 on a principal surface side is removed by wet etching by using the second chemical until the first material film 2 formed on the principal surface side is exposed, and the first material film 2 on the principal surface side is removed by using the first chemical by wet etching until a semiconductor substrate surface is exposed on the principal surface side. COPYRIGHT: (C)2009,JPO&INPIT
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