| 摘要 |
An III-nitride semiconductor light emitting diode is provided to improve external quantum efficiency by controlling an angle made by a scribing line for a substrate with the protrusion. A protrusion(90) is formed on a sapphire substrate(10). A buffer layer is grown on the sapphire substrate. An n type nitride semiconductor layer is grown on the buffer layer. An active layer is grown on the n type nitride semiconductor. A p type nitride semiconductor layer is grown on the active layer. A transmissible electrode is formed on the p type nitride semiconductor. A p electrode is formed on the transmissible electrode. The n electrode is formed on the n type nitride semiconductor layer exposed by mesa-etching the p type nitride semiconductor layer and the active layer. The protrusion has two rounded sides and two connection sides. |
