| 摘要 |
A method of manufacturing silicon single crystal is provided to amend the reference velocity of a controller according to the pull velocity of the cable and make the ingot of the silicon single crystal. The method(M100) of manufacturing of a silicon single crystal comprises the stand-by step(S10) of the poly-crystal silicon, the formation step(S20) of the silicon solution, and the configuration step(S30) of the pull rate and the pulling step(S40) of the cable. The stand-by step of the poly-crystal silicon is performed in order to put poly-crystal silicon in the crucible. The formation step of the silicon solution is performed to heat the crucible to melt the poly-crystal silicon. The configuration stage of the pulling velocity is performed in order to correspond to the reference velocity of controller in the pulling velocity of the silicon single crystal production equipment. The pulling step of the cable is performed to raise the cable after contacting the seed of the cable to the silicon solution.
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