发明名称 ATOMIC LAYER DEPOSITION APPARATUS
摘要 PURPOSE: An atomic layer deposition apparatus is provided to keep the temperature of a substrate and a susceptor constant by maintain the distance between susceptor and a heater constant and heating the substrate uniformly. CONSTITUTION: A susceptor(120) is installed in a process chamber(110) and mounts and rotates a plurality of the substrates(W). The susceptor includes a rotary shaft(121) which is installed in a lower part of the susceptor and lifts and rotates the susceptor. A heater(140) is installed in a lower part of the susceptor and heats the susceptor and the substrate. A heater lifting unit(141) lifts the heater while maintaining the distance between the susceptor and the heater constant when ascending and descending the susceptor.
申请公布号 KR20100013592(A) 申请公布日期 2010.02.10
申请号 KR20080075189 申请日期 2008.07.31
申请人 K.C.TECH CO., LTD. 发明人 KANG, SEUNG IK;KIM, HYUNG IL
分类号 H01L21/20 主分类号 H01L21/20
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