发明名称 |
ATOMIC LAYER DEPOSITION APPARATUS |
摘要 |
PURPOSE: An atomic layer deposition apparatus is provided to keep the temperature of a substrate and a susceptor constant by maintain the distance between susceptor and a heater constant and heating the substrate uniformly. CONSTITUTION: A susceptor(120) is installed in a process chamber(110) and mounts and rotates a plurality of the substrates(W). The susceptor includes a rotary shaft(121) which is installed in a lower part of the susceptor and lifts and rotates the susceptor. A heater(140) is installed in a lower part of the susceptor and heats the susceptor and the substrate. A heater lifting unit(141) lifts the heater while maintaining the distance between the susceptor and the heater constant when ascending and descending the susceptor.
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申请公布号 |
KR20100013592(A) |
申请公布日期 |
2010.02.10 |
申请号 |
KR20080075189 |
申请日期 |
2008.07.31 |
申请人 |
K.C.TECH CO., LTD. |
发明人 |
KANG, SEUNG IK;KIM, HYUNG IL |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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