发明名称 LATCH CIRCUIT AND LATCH CIRCUIT ARRAY INCLUDING THE SAME
摘要 A latch circuit may include first to fourth storage nodes; first to fourth transistor pairs, each including a PMOS transistor and an NMOS transistor connected in series through a corresponding one of the first to fourth storage nodes, wherein each of the first to fourth storage nodes is connected to a gate of an NMOS transistor of a transistor pair in a previous stage and a gate of a PMOS transistor of a transistor pair in a next stage; a first connection unit suitable for connecting a data bus with a Kth storage node of the first to fourth storage nodes when read and write operations are performed, wherein K is an integer from 1 to 4; and second connection units suitable for connecting the data bus with one or more of the first to fourth storage nodes, except for the Kth storage node, when the write operation is performed.
申请公布号 US2016163360(A1) 申请公布日期 2016.06.09
申请号 US201514680852 申请日期 2015.04.07
申请人 SK hynix Inc. 发明人 KIM Chang-Hyun;LEE Hyun-Gyu
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
主权项 1. A latch circuit comprising: first to fourth storage nodes; first to fourth transistor pairs, each comprising a PMOS transistor and an NMOS transistor connected in series through a corresponding one of the first to fourth storage nodes, wherein each of the first to fourth storage nodes is connected to a gate of an NMOS transistor of a transistor pair in a previous stage and a gate of a PMOS transistor of a transistor pair in a next stage; a first connection unit suitable for electrically connecting a data bus with a Kth storage node of the first to fourth storage nodes when read and write operations are performed, wherein K is an integer from 1 to 4, inclusive; and one or more second connection units suitable for electrically connecting the data bus with one or more of the first to fourth storage nodes, except for the Kth storage node, when the write operation is performed.
地址 Gyeonggi-do KR