CHARACTERISTIC CONTROLLABLE MEMRISTOR DEVICE EQUIVALENT CIRCUIT BY CONTROL VOLTAGE

摘要

According to an embodiment of the present invention, provided is a memristor device equivalent circuit having an input terminal and an output terminal and characteristics of which vary through a control voltage. The memristor device equivalent circuit includes: a first operation amplifier that functions as a buffer for receiving an electric potential of the input terminal of the memristor device equivalent circuit; a variable resistance unit one end of which is connected to the output terminal of the first operation amplifier such that resistance characteristics vary according to a level of the applied control voltage; a second operation amplifier that functions as an integrator for receiving an electric potential of an opposite end of the variable resistance unit; a first multiplier that outputs a value that is proportional to a power of the output voltage of the second operation amplifier; a second multiplier that outputs a value that is proportional to the output value of the first multiplier and a product of the voltages of the opposite ends of the memristor device circuit; and a third operation amplifier that is a non-reversible amplifier that receivers a potential of the memristor element equivalent circuit and forms a current flowing through the memristor element equivalent circuit between the non-reversible amplifier and an output end of the second multiplier. An object of the present invention provides a nano wire memristor device that can control characteristics thereof through control of a voltage.