发明名称 |
OPTOELECTRONIC SEMICONDUCTOR CHIP |
摘要 |
An optoelectronic semiconductor chip includes a semiconductor layer sequence having an active layer that generates radiation and at least one n-doped layer adjoining the active layer, the semiconductor layer sequence is based on AlInGaN or on InGaN, one or a plurality of central layers composed of AlGaN each having thicknesses of 25 nm to 200 nm are grown at a side of the n-doped layer facing away from a carrier substrate, a coalescence layer of doped or undoped GaN having a thickness of 300 nm to 1.2 μm is formed at a side of the central layer or one of the central layers facing away from the carrier substrate, a roughening extends from the coalescence layer as far as or into the n-doped layer, a radiation exit area of the semiconductor layer stack is formed partly by the coalescence layer, and the central layer is exposed in places. |
申请公布号 |
US2016225952(A1) |
申请公布日期 |
2016.08.04 |
申请号 |
US201615098779 |
申请日期 |
2016.04.14 |
申请人 |
OSRAM Opto Semiconductors GmbH |
发明人 |
Hertkorn Joachim;Engl Karl;Hahn Berthold;Weimar Andreas |
分类号 |
H01L33/14;H01L33/22;H01L33/32;H01L33/06 |
主分类号 |
H01L33/14 |
代理机构 |
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代理人 |
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主权项 |
1. An optoelectronic semiconductor chip comprising a semiconductor layer sequence having an active layer that generates radiation and having at least one n-doped layer, wherein
the n-doped layer adjoins the active layer, the semiconductor layer sequence is based on AlInGaN or on InGaN, one or a plurality of central layers composed of AlGaN each having thicknesses of 25 nm to 200 nm are grown at a side of the n-doped layer facing away from a carrier substrate, a coalescence layer composed of doped or undoped GaN having a thickness of 300 nm to 1.2 μm is formed at a side of the central layer or of one of the central layers facing away from the carrier substrate, a roughening extends from the coalescence layer as far as or into the n-doped layer, a radiation exit area of the semiconductor layer stack is formed partly by the coalescence layer, and the central layer is exposed in places. |
地址 |
Regensburg DE |