发明名称 ION SOURCE, ION BEAM DEVICE AND PROCESSING METHOD FOR SAMPLE
摘要 PROBLEM TO BE SOLVED: To provide an ion source that can be effectively used for both monomer ions and cluster ions.SOLUTION: An ion source 20 comprises a raw material gas introduction part 60 for introducing argon gas, a cluster generation chamber 30 which is connected to the raw material gas introduction part 60 and has a cluster generating mechanism (a nozzle 31 and the raw material gas introduction part 60) for generating cluster from argon gas, and a plasma generation chamber 40 which is connected to the raw material gas introduction part 60 and the cluster generation chamber 30 and has a plasma generating mechanism (an RF coil 43 and an RF power source 71) for generating plasma.SELECTED DRAWING: Figure 1
申请公布号 JP2016143583(A) 申请公布日期 2016.08.08
申请号 JP20150019346 申请日期 2015.02.03
申请人 HITACHI HIGH-TECH SCIENCE CORP 发明人 SUGIYAMA YASUHIKO;OBA HIROSHI
分类号 H01J27/02;H01J27/16;H01J37/08;H01J37/30;H01J37/317 主分类号 H01J27/02
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