发明名称 |
ION SOURCE, ION BEAM DEVICE AND PROCESSING METHOD FOR SAMPLE |
摘要 |
PROBLEM TO BE SOLVED: To provide an ion source that can be effectively used for both monomer ions and cluster ions.SOLUTION: An ion source 20 comprises a raw material gas introduction part 60 for introducing argon gas, a cluster generation chamber 30 which is connected to the raw material gas introduction part 60 and has a cluster generating mechanism (a nozzle 31 and the raw material gas introduction part 60) for generating cluster from argon gas, and a plasma generation chamber 40 which is connected to the raw material gas introduction part 60 and the cluster generation chamber 30 and has a plasma generating mechanism (an RF coil 43 and an RF power source 71) for generating plasma.SELECTED DRAWING: Figure 1 |
申请公布号 |
JP2016143583(A) |
申请公布日期 |
2016.08.08 |
申请号 |
JP20150019346 |
申请日期 |
2015.02.03 |
申请人 |
HITACHI HIGH-TECH SCIENCE CORP |
发明人 |
SUGIYAMA YASUHIKO;OBA HIROSHI |
分类号 |
H01J27/02;H01J27/16;H01J37/08;H01J37/30;H01J37/317 |
主分类号 |
H01J27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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