发明名称 METHOD FOR TREATING WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method for treating a wafer which subjects a wafer to grinding treatment in a state of being reinforced by an adhesive tape, where the adhesive tape surely follows unevenness and exhibits sufficient adhesive force even in the wafer having the unevenness thereon, and prevents warpage from occurring in a thin film wafer after having been ground.SOLUTION: A method for treating a wafer includes: an adhesive tape sticking step of sticking an adhesive tape having at least a curable resin layer containing a curing component which is crosslinked and cured by irradiation with light or heating and an adhesive layer, onto a wafer from the side of the adhesive layer, and reinforcing the wafer; a curable resin layer curing step of crosslinking and curing the curing component by irradiating the adhesive tape with light or heating the adhesive tape; a grinding step of grinding the wafer reinforced by the adhesive tape, and thinning the wafer; and an adhesive tape peeling step of peeling the adhesive tape from the wafer after having been ground.SELECTED DRAWING: None
申请公布号 JP2016146437(A) 申请公布日期 2016.08.12
申请号 JP20150023389 申请日期 2015.02.09
申请人 SEKISUI CHEM CO LTD 发明人 ASO TAKAHIRO;YABUGUCHI HIROHIDE
分类号 H01L21/304;C09J7/02;C09J201/00 主分类号 H01L21/304
代理机构 代理人
主权项
地址