| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor nonvolatile memory element and a manufacturing method of the same, which can adjust threshold voltage with high accuracy in order to reduce circuit characteristic variation of a semiconductor integrated circuit device.SOLUTION: A semiconductor nonvolatile memory element comprises: a control gate electrode 8, a floating gate electrode 7 and a source/drain region 12 for a constant current source element in a semiconductor integrated circuit device; a thin first gate insulation film 9 under the control gate electrode; and a second gate insulation film 14 with a thickness of not being broken even when an excessive voltage higher than an operating voltage of the semiconductor integrated circuit device is applied. By injecting excessive charge greater than an operating voltage to a floating gate electrode 7 through the second gate insulation film 14 by a drain terminal 2, threshold voltage is adjusted. A normally-on semiconductor nonvolatile memory element in which an injected carrier is not leaked within an operating voltage range is used.SELECTED DRAWING: Figure 11 |
