发明名称 HALF-TONE PHASE SHIFT BLANKMASK, PHOTOMASK AND IT'S MANUFACTURING METHOD
摘要 <p>A half-tone phase shift blank mask, photomask and its manufacturing method are provided to improve the density and line edge roughness of the thin film by using the DC-RF coupled sputtering method. The phase shift layer is formed on the transparent substrate(10). The phase shift layer consists of multilayer more than the single layer or two layers. The light-shielding layer(50) is formed on the phase shift layer. The reflection barrier layer(60) is formed on the light-shielding layer. The resist film is formed on the reflection barrier layer. The target for the single layer phase shift layer is made of metal more than one kind and/or the transition metal. The first phase inversion film(20) includes tantalum(Ta) and/or chrome(Cr). The first phase inversion film is formed at the upper part of the transparent substrate.</p>
申请公布号 KR20090087153(A) 申请公布日期 2009.08.17
申请号 KR20080012421 申请日期 2008.02.12
申请人 S&STECH CO., LTD. 发明人 NAM, KEE SOO;CHA, HAN SUN;YANG, SIN JU;YANG, CHUL KYU
分类号 H01L21/027 主分类号 H01L21/027
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