发明名称 |
HALF-TONE PHASE SHIFT BLANKMASK, PHOTOMASK AND IT'S MANUFACTURING METHOD |
摘要 |
<p>A half-tone phase shift blank mask, photomask and its manufacturing method are provided to improve the density and line edge roughness of the thin film by using the DC-RF coupled sputtering method. The phase shift layer is formed on the transparent substrate(10). The phase shift layer consists of multilayer more than the single layer or two layers. The light-shielding layer(50) is formed on the phase shift layer. The reflection barrier layer(60) is formed on the light-shielding layer. The resist film is formed on the reflection barrier layer. The target for the single layer phase shift layer is made of metal more than one kind and/or the transition metal. The first phase inversion film(20) includes tantalum(Ta) and/or chrome(Cr). The first phase inversion film is formed at the upper part of the transparent substrate.</p> |
申请公布号 |
KR20090087153(A) |
申请公布日期 |
2009.08.17 |
申请号 |
KR20080012421 |
申请日期 |
2008.02.12 |
申请人 |
S&STECH CO., LTD. |
发明人 |
NAM, KEE SOO;CHA, HAN SUN;YANG, SIN JU;YANG, CHUL KYU |
分类号 |
H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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