METHOD OF CRUCIBLE-FREE ZONE MELTING OF SEMICONDUCTOR MATERIAL, PARTICULARLY SILICON,申请号CAD818425-传众专利搜索

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发明名称	METHOD OF CRUCIBLE-FREE ZONE MELTING OF SEMICONDUCTOR MATERIAL, PARTICULARLY SILICON
摘要
申请公布号	CA818425(A)	申请公布日期	1969.07.22
申请号	CAD818425	申请日期
申请人	SIEMENS-SCHUCKERTWERKE AKTIENGESELLSCHAFT	发明人	KONRAD REUSCHEL
分类号		主分类号
代理机构		代理人
主权项
地址

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