| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an exposure mask for obtaining a sufficient focal depth of an isolated pattern and to provide a pattern formation method. <P>SOLUTION: A mask 10 is a halftone phase shift mask used in an exposure step for forming on a wafer an isolated pattern having a dimension of 70 nm and generating no diffracted light. The mask 10 includes a hole pattern 1, auxiliary patterns 2a, 2b, a halftone region 3 and light-shielding regions 4a, 4b. The hole pattern 1 is square and has a dimension equal to or greater than a critical resolution of exposure light. The auxiliary patterns 2a and 2b are octagonal in shape and arranged to surround the hole pattern 1, and each has a dimension smaller than the critical resolution of exposure light. The halftone region 3 has a transmittance of 12% and is arranged between the hole pattern 1 and the auxiliary pattern 2a. The light-shielding region 4a is arranged between the auxiliary patterns 2a and 2b. The light-shielding region 4b is arranged around the outer circumference of the auxiliary pattern 2b. <P>COPYRIGHT: (C)2009,JPO&INPIT |
